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SN65C1168E-SEP

SN65C1168E-SEP

描述

The SN65C1168E-SEP consists of dual drivers and dual receivers with ±12-kV ESD (HBM) and ±8-kV ESD (IEC61000-4-2 Air-Gap Discharge and Contact Discharge) for RS-422 bus pins. The device meets the requirements of TIA/EIA-422-B and ITU recommendation V.11. Some parameters do not meet all TIA/EIA-422-B and ITU recommendation V.11 requirements after 20-krad(Si) TID exposure.

The SN65C1168E-SEP drivers have individual active-high enables.

特性

• VID V62/19606

• Radiation hardened

• Single event latch-up (SEL) immune to 43 MeV-cm2/mg at 125°C

• ELDRS-free to 30 krad(Si)

• Total ionizing dose (TID) RLAT for every wafer lot up to 20 krad(Si)

• Space Enhanced Plastic

• Controlled baseline

• Gold wire

• NiPdAu lead finish

• One assembly and test site

• One fabrication site

• Available in military (–55°C to 125°C) temperature range

• Extended product life cycle

• Extended product-change notification

• Product traceability

• Enhanced mold compound for low outgassing

• Meet or exceed standards TIA/EIA-422-B and ITU recommendation V.11

• Operate from single 5-V power supply

• ESD protection for RS-422 bus pins

• ±12-kV human-body model (HBM)

• ±8-kV IEC 61000-4-2, contact discharge

• ±8-kV IEC 61000-4-2, air-gap discharge

• Low-pulse skew

• Receiver input impedance . . . 17 kΩ (typical)

• Receiver input sensitivity . . . ±200 mV

• Receiver common-mode input voltage range of
  –7 V to 7 V

• Glitch-free power-up/power-down protection